WebMay 31, 2024 · SiCxNy films can be produced by various technologies and methods. Generally, the widely-used SiCxNy films are produced by using multi-source precursors (SiHx(CH3)y, N2, and NH3) in a plasma-enhanced chemical vapor … WebAs expected, the deconvolution result revealed the coexistence of Si N, Si C and C N chemical bondings in the as-deposited film. Careful examination of the binding energy …
IR-study of a-SiCx:H and a-SiCxNy:H films for c-Si surface …
WebNov 20, 2014 · Amorphous Silicon carbonitride (a-SiCxNy) films were deposited by RF (13.56 MHz) parallel-plate PECVD system at temperatures of 25 °C, 100 °C, 200 °C, 300 °C, and 400 °C with 0.6-Torr pressure. WebJul 24, 2024 · We developed a novel process for the atomic layer deposition (ALD) of SiC x N y films using a Si 2 Cl 6 and a CH 3 NH 2 plasma. Under self-limiting growth conditions, this ALD process led to SiC x N y films with up to 9 atomic percent carbon with a conformality >95% in 5:1 aspect ratio nanostructures. The surface reactions during ALD, and in … great southern killarney ireland
Effect of a-SiCxNy:H Encapsulation on the Stability and ...
WebSingle-step synthesis of one-dimensional Ge/SiCxNy core−shell nanocables was achieved by chemical vapor deposition of the molecular precursor [Ge{N(SiMe3)2}2]. Single crystalline … WebStructural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N2 and Ar. Structural analysis and microstructural observation of SiCxNy films prepared by reactive sputtering of SiC in N2 and Ar. Yawen Li. 2000, Applied Surface Science. Read Full Text. Download Free PDF. WebMar 2, 2012 · Low-k silicon carbonitride (SiC x N y) films with k of 3.6–4.6 were prepared by radio frequency plasma-enhanced chemical vapor deposition at 25 to 400°C under low power density of 0.15 W/cm 3, using a single source precursor, 1, 3, 5-trimethyl-1, 3, 5-trivinylcyclotrisilazane (VSZ), and Ar.At lower deposition temperatures (≤ 200°C), most … great southern killarney hotel ireland